EFFECTS OF VACANCY DEFECTS ON MONOLAYER HBN: A DENSITY FUNCTIONAL THEORY STUDY

Authors

  • Tran Thi Thoa Faculty of Chemistry, Hanoi National University of Education, Hanoi, Vietnam https://orcid.org/0000-0003-1753-1847
  • Nguyen Phuong Linh Faculty of Chemistry, Hanoi National University of Education, Hanoi, Vietnam
  • Nguyen Thi Khanh Linh Faculty of Chemistry, Hanoi National University of Education, Hanoi, Vietnam
  • Vu Thi Huong Giang Faculty of Chemistry, Hanoi National University of Education, Hanoi, Vietnam
  • Hung Hoàng Văn Faculty of Chemistry, Hanoi National University of Education

DOI:

https://doi.org/10.18173/2354-1059.2026-0035

Keywords:

monolayer hBN, nitrogen vacancy, boron vacancy, electronic structure, projected density of states (PDOS), DFT

Abstract

Density functional theory (DFT) calculations were performed to investigate the structural and electronic properties of pristine monolayer hexagonal boron nitride (hBN) containing neutral B and N vacancies. Both types of vacancies preserve the overall planar configuration of the monolayer but induce distinct local structural reconstructions. The N vacancy slightly elongates the neighboring B–N bonds, whereas the B vacancy causes bond contraction accompanied by angular distortion. The calculated vacancy removal energies indicate that V_N@hBN is energetically more favorable than V_B@hBN. Notably, both the vacancies introduce localized in-gap states and induce spin-dependent electronic properties. In V_B@hBN, these states predominantly originate from the px-and py- orbitals of the three N atoms surrounding the vacancy, whereas those of V_N@hBN are primarily associated with the pz- orbitals. These findings demonstrate that vacancy defects can effectively modulate the electronic structure and spin properties of monolayer hBN.

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Published

30-09-2026

How to Cite

Thi Thoa, T., Phuong Linh, N., Thi Khanh Linh, N., Thi Huong Giang, V., & Hoàng Văn, H. (2026). EFFECTS OF VACANCY DEFECTS ON MONOLAYER HBN: A DENSITY FUNCTIONAL THEORY STUDY. Journal of Science Natural Science, 71(3), 90-99. https://doi.org/10.18173/2354-1059.2026-0035